N-Channel MOSFET, 209 A, 40 V, 7-Pin DirectFET Infineon IRL7486MTRPbF
- RS Stock No.:
- 896-7330
- Mfr. Part No.:
- IRL7486MTRPbF
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 896-7330
- Mfr. Part No.:
- IRL7486MTRPbF
- Brand:
- Infineon
StrongIRFET™ Logic-Level Power MOSFET, Infineon
An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.
Optimal RDS(on) @ VGS = +4.5V
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters
The Infineon IRL7486M is the 40V single N-channel logic level strongIRFET power MOSFET in a directFET ME package. The StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The device are ideal for low frequency applications requiring performance and ruggedness.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dv/dt and di/dt capability
Enhanced body diode dv/dt and di/dt capability
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 209 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DirectFET |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 104 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 6.35mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 76 nC |
| Width | 5.05mm |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Height | 0.7mm |
| Series | StrongIRFET |
| Minimum Operating Temperature | -55 °C |